The RD team of Orientasl Semiconductor has rich experience in the research of wide bandgap semiconductors, and has successively developed IGBTs and wide bandgap FETs with parallel SiC. The high-speed IGBT with parallel SiC diodes greatly improves the characteristics of Eon, Trr, Qrr and Qg, and is suitable for use in systems requiring high efficiency. It supports 80-100kHz high-speed switches and totem-pole bridgeless PFC applications.